Anomalous positive microwave magnetoresistance of compensated Ge:Ga near the metal-insulator transition

被引：0

作者：

Veinger, AI ^{[1
]}

Zabrodskii, AG ^{[1
]}

Tisnek, TV ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2002年 / 230卷 / 01期

关键词：

D O I：

10.1002/1521-3951(200203)230:1<107::AID-PSSB107>3.0.CO;2-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The contactless technique of electron spin resonance was used to measure magnetoresistance (MR) phenomena in heavily doped and compensated Ge:Ga both in the insulator and metallic phases near the insulator-metal (IM) transition. The concentration dependency of the temperature power coefficient of the MR allows us to identify the effect origin versus the hole density. They are: the wave function shrinkage by magnetic field at p < 8.7 x 10(16) cm(-3); the weak localization regime of the quantum correction theory with the temperature depending diffusion coefficient at 8.7 x 10(16) < p < 1.5 x 10(17) cm(-3); and the same theory with the temperature independent diffusion coefficient at p > 1.5 x 10(17) cm(-3).

引用

页码：107 / 111

页数：5

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