Comparison of the electrical activation of P+ and N+ ions co-implanted along with Si+ or C+ ions into 4H-SiC

被引：12
|
作者：
Schmid, F [1 ]
Pensl, G [1 ]
机构：
[1] Univ Erlangen Nurnberg, Inst Angew Phys, DE-91058 Erlangen, Germany
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 16期
关键词：
D O I：
10.1063/1.1707220
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The annealing behavior of P+ and N+ ions implanted into p-type 4H-SiC epilayers is studied by a temperature-dependent Hall-effect. Detailed investigations reveal that the electrical activation of implanted P+ ions is governed by the site competition effect, while implanted N+ ions react with intrinsic defects during the annealing step and can form thermally stable and electrically inactive complexes. In this way, the electrical activation of implanted N+ ions is strongly reduced. (C) 2004 American Institute of Physics.
引用
收藏
页码：3064 / 3066
页数：3
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