Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes

被引：0
|
作者：
P. A. Ivanov
T. P. Samsonova
A. S. Potapov
机构：
[1] Ioffe Institute,
来源：
Semiconductors | 2018年 / 52卷
关键词：
Electrothermal Breakdown; Intrinsic Carrier Concentration; Avalanche Current; Donor Doping Concentration; Diode Structure;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：1630 / 1634
页数：4
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