Avalanche Breakdown Stability of High Voltage (1430 V) 4H-SiC p+–n0–n+ Diodes

被引：0
|
作者：
P. A. Ivanov
T. P. Samsonova
A. S. Potapov
机构：
[1] Ioffe Institute,
来源：
Semiconductors | 2018年 / 52卷
关键词：
Electrothermal Breakdown; Intrinsic Carrier Concentration; Avalanche Current; Donor Doping Concentration; Diode Structure;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1630 / 1634
页数：4
相关论文
共 50 条
  • [31] Electric field breakdown mechanisms in high power epitaxial 4H-SiC p-n junction diodes
    Tin, CC
    Madangarli, V
    Luckowski, E
    Casady, J
    IsaacsSmith, T
    Williams, JR
    Johnson, RW
    Gradinaru, G
    Sudarshan, TS
    ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 55 - 58
  • [32] Self-Biased (p+)Diamond/(n)4H-SiC Vertical Schottky Diodes for UV Detection
    Mandal, Krishna C.
    Chaudhuri, Sandeep K.
    Nag, Ritwik
    IEEE ELECTRON DEVICE LETTERS, 2024, 45 (12) : 2331 - 2334
  • [33] Measurement and device simulation of avalanche breakdown in high-voltage 4H-SiC diodes including the influence of macroscopic defects
    Domeij, M
    Brünahl, H
    Östling, M
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1277 - 1280
  • [34] Ideal static breakdown in high-voltage (1 kV) 4H-SiC p-n junction diodes with guard ring termination
    Ivanov, PA
    Grekhov, IV
    Il'inskaya, ND
    Samsonova, TP
    SEMICONDUCTORS, 2005, 39 (12) : 1426 - 1428
  • [35] High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC
    Perez-Tomas, A.
    Jennings, M. R.
    Davis, M.
    Shah, V.
    Grasby, T.
    Covington, J. A.
    Mawby, P. A.
    MICROELECTRONICS JOURNAL, 2007, 38 (12) : 1233 - 1237
  • [36] High-voltage (900 V) 4H-SiC Schottky diodes with a boron-implanted guard p-n junction
    Grekhov, I. V.
    Ivanov, P. A.
    Il'inskaya, N. D.
    Kon'kov, O. I.
    Potapov, A. S.
    Samsonova, T. P.
    SEMICONDUCTORS, 2008, 42 (02) : 211 - 214
  • [37] Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes
    Hazdra, Pavel
    Smrkovsky, Petr
    Vobecky, Jan
    Mihaila, Andrei
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (01) : 202 - 207
  • [38] The response of high voltage 4H-SiC p-n junction diodes to different edge termination techniques
    Oder, TN
    Tin, CC
    Williams, JR
    Isaacs-Smith, T
    Madangarli, V
    Sudarshan, TS
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 101 - 106
  • [39] Fully Planar 4H-SiC Avalanche Photodiode With Low Breakdown Voltage
    Sciuto, A.
    Mazzillo, M.
    Lenzi, P.
    Di Franco, S.
    Mello, D.
    Barbarino, P. P.
    Longo, G.
    Cascino, S.
    Santangelo, A.
    Albergo, S.
    Tricomi, A.
    Starodubtsev, O.
    Adriani, O.
    D'Arrigo, G.
    IEEE SENSORS JOURNAL, 2017, 17 (14) : 4460 - 4465
  • [40] Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p+−i−n+ Diode
    P. A. Ivanov
    A. S. Potapov
    I. V. Grekhov
    Technical Physics, 2018, 63 : 928 - 931
12345