Advanced TSV-Based Crystal Resonator Devices Using 3-D Integration Scheme With Hermetic Sealing

被引：10
|
作者：
Shih, Jian-Yu [1 ]
Chen, Yen-Chi [2 ]
Chiu, Chih-Hung [2 ]
Hu, Yu-Chen [1 ]
Lo, Chung-Lun [2 ]
Chang, Chi-Chung [2 ]
Chen, Kuan-Neng [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] TXC Corp, Tao Yuan 33378, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 08期
关键词：
3-D integration; crystal resonator through-silicon via (TSV);
D O I：
10.1109/LED.2013.2265335
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An advanced crystal resonator device scheme using Cu through-silicon via (TSV), 3-D integration, and Si packaging technologies is successfully demonstrated. In addition to robust structural quality, the crystal resonator packaging has excellent electrical characteristics of low leakage current and reliability against harsh environment for MIL-STD-883 hermetic encapsulation. Using 3-D integration technologies and Si packaging, the proposed TSV-based crystal resonator device possesses the manufacturability potential while conventional ones using a metal lid or ceramic enclosure.
引用
收藏
页码：1041 / 1043
页数：3
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