10-15 nm ultrashallow junction formation by flash-lamp annealing

被引：63

作者：

Ito, T

Iinuma, T

Murakoshi, A

Akutsu, H

Suguro, K

Arikado, T

Okumura, K

Yoshioka, M

Owada, T

Imaoka, Y

Murayama, H

Kusuda, T

机构：

[1] Toshiba Co Ltd, Semicond Co, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

[2] Ushio Inc, Lamp Technol & Engn Div, Himeji, Hyogo 6710224, Japan

[3] Dainippon Screen Mfg Co Ltd, Dev Dept Elect Equipment, Fushimi Ku, Kyoto 6128486, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 4B期

关键词：

flash-lamp annealing; ultrashallow junction; retrograde channel; super-saturation; activation; As; B; In; MOSFETs;

D O I：

10.1143/JJAP.41.2394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Flash-lamp annealing (FLA) technology, a new method of activating implanted impurities, is proposed, FLA is able to reduce the time of the heating cycle to within the millisecond range. With this technology, an abrupt profile is realized, with a dopant concentration that can exceed the maximum carrier concentration obtained by conventional rapid thermal annealing (RTA) or furnace annealing. In contrast to a laser annealing method, FLA can activate dopants in an 8-inch-diameter substrate and, simultaneously, strictly control diffusion of dopants so as not to melt the substrate surface by radiation. FLA presents the possibility of fabricating sub-0.1-mum MOSFETs with good characteristics.

引用

页码：2394 / 2398

页数：5

共 50 条

[41] Al-delta-doped ZnO films made by atomic layer deposition and flash-lamp annealing for low-emissivity coating
Zhang, Guoxiu
Steuer, Oliver
Li, Rang
Cheng, Yu
Huebner, Rene
Helm, Manfred
Zhou, Shengqiang
Liu, Yufei
Prucnal, Slawomir
APPLIED SURFACE SCIENCE, 2024, 648
[42] Ultrashallow junction formation using novel plasma doping technology beyond 50 nm MOS devices
Im, K
Cho, WJ
Ahn, CG
Yang, JH
Baek, IB
Lee, S
Baek, S
Hwang, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2376 - 2379
[43] Formation of n plus /p junctions less than 20 nm deep in Ge and diffusion control by Flash Lamp Annealing (FLA)
Kawarazaki, H.
Tanimura, H.
Ono, Y.
Yamada, T.
Kato, S.
Aoyama, T.
Kobayashi, I.
2015 15TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 2015, : 22 - 25
[44] Influence of Thermal and Flash-Lamp Annealing on the Thermoelectrical Properties of Cu2ZnSnS4 Nanocrystals Obtained by "Green" Colloidal Synthesis
Havryliuk, Yevhenii
Dzhagan, Volodymyr
Karnaukhov, Anatolii
Selyshchev, Oleksandr
Hann, Julia
Zahn, Dietrich R. T.
NANOMATERIALS, 2023, 13 (11)
[45] Ultrashallow (<10 nm) p+/n junction formed by B18H22 cluster ion implantation and excimer laser annealing
Heo, Sungho
Hwang, Hyunsang
Cho, H. T.
Krull, W. A.
APPLIED PHYSICS LETTERS, 2006, 89 (24)
[46] Origins of flash lamp annealing induced p-n junction leakages in a 45 nm p-MOSFET with strained SiGe source/drain
Cheng, C. Y.
Fang, Y. K.
Hsieh, J. C.
Hsia, H.
Lin, S. S.
Hou, C. S.
Ku, K. C.
Sheu, Y. M.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (09)
[47] Low resistance, low-leakage ultrashallow p+-junction formation using millisecond flash anneals
Jain, SH
Griffin, PB
Plummer, JD
McCoy, S
Gelpey, J
Selinger, T
Downey, DF
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) : 1610 - 1615
[48] ULTRASHALLOW P-TYPE LAYER FORMATION BY RAPID VAPOR-PHASE DOPING USING A LAMP ANNEALING APPARATUS
KIYOTA, Y
MATSUSHIMA, M
KANEKO, Y
KANETOMO, M
TAMAKI, Y
MURAKI, K
INADA, T
APPLIED PHYSICS LETTERS, 1994, 64 (07) : 910 - 911
[49] Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing
Prucnal, S.
Turek, M.
Drozdziel, A.
Pyszniak, K.
Zhou, S. Q.
Kanjilal, A.
Skorupa, W.
Zuk, J.
APPLIED PHYSICS B-LASERS AND OPTICS, 2010, 101 (1-2): : 315 - 319
[50] The formation of poly-Si films on flat glass substrates by flash lamp annealing
Watanabe, Taiki
Ohdaira, Keisuke
THIN SOLID FILMS, 2015, 595 : 235 - 238

← 1 2 3 4 5 →