10-15 nm ultrashallow junction formation by flash-lamp annealing

被引：63

作者：

Ito, T

Iinuma, T

Murakoshi, A

Akutsu, H

Suguro, K

Arikado, T

Okumura, K

Yoshioka, M

Owada, T

Imaoka, Y

Murayama, H

Kusuda, T

机构：

[1] Toshiba Co Ltd, Semicond Co, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

[2] Ushio Inc, Lamp Technol & Engn Div, Himeji, Hyogo 6710224, Japan

[3] Dainippon Screen Mfg Co Ltd, Dev Dept Elect Equipment, Fushimi Ku, Kyoto 6128486, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 4B期

关键词：

flash-lamp annealing; ultrashallow junction; retrograde channel; super-saturation; activation; As; B; In; MOSFETs;

D O I：

10.1143/JJAP.41.2394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Flash-lamp annealing (FLA) technology, a new method of activating implanted impurities, is proposed, FLA is able to reduce the time of the heating cycle to within the millisecond range. With this technology, an abrupt profile is realized, with a dopant concentration that can exceed the maximum carrier concentration obtained by conventional rapid thermal annealing (RTA) or furnace annealing. In contrast to a laser annealing method, FLA can activate dopants in an 8-inch-diameter substrate and, simultaneously, strictly control diffusion of dopants so as not to melt the substrate surface by radiation. FLA presents the possibility of fabricating sub-0.1-mum MOSFETs with good characteristics.

引用

页码：2394 / 2398

页数：5

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