A High-efficiency class F MMIC power amplifier at 4.0 GHz using AlGaN/GaN HEMT technology

被引：0
|
作者：
Zomorrodian, Valiallah [1 ]
Mishra, Umesh K. [1 ]
York, Robert A. [1 ]
机构：
[1] Univ Calif Santa Barbara, Elect & Comp Eng Dept, Santa Barbara, CA 93106 USA
来源：
2012 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2012年
关键词：
GaN; high electron mobility transistor (HEMT); high power; high efficiency; monolithic microwave integrated circuits (MMIC); Class F; power amplifier; non-linear;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-efficiency class F MMIC power amplifier designed at 4 GHz using AlGaN/GaN HEMT technology is presented. At V-DS = 20 V the circuit produced 69 % PAE, 30.4 dBm of output power and gain of 11.4 dB. When the drain bias was increased to 35 V, the circuit produced 60% PAE, 34.3 dBm of output power and gain of 12.3 dBm, corresponding to a power density of 5.36 W/mm. The results show significant improvement in PAE compared to the previously published results for MMICs implemented using class E topologies.
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页数：4
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