A High-efficiency class F MMIC power amplifier at 4.0 GHz using AlGaN/GaN HEMT technology

被引：0
|
作者：
Zomorrodian, Valiallah [1 ]
Mishra, Umesh K. [1 ]
York, Robert A. [1 ]
机构：
[1] Univ Calif Santa Barbara, Elect & Comp Eng Dept, Santa Barbara, CA 93106 USA
来源：
2012 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2012年
关键词：
GaN; high electron mobility transistor (HEMT); high power; high efficiency; monolithic microwave integrated circuits (MMIC); Class F; power amplifier; non-linear;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-efficiency class F MMIC power amplifier designed at 4 GHz using AlGaN/GaN HEMT technology is presented. At V-DS = 20 V the circuit produced 69 % PAE, 30.4 dBm of output power and gain of 11.4 dB. When the drain bias was increased to 35 V, the circuit produced 60% PAE, 34.3 dBm of output power and gain of 12.3 dBm, corresponding to a power density of 5.36 W/mm. The results show significant improvement in PAE compared to the previously published results for MMICs implemented using class E topologies.
引用
收藏
页数：4
相关论文
共 50 条
  • [31] Design of a High Power, Wideband Power Amplifier Using AlGaN/GaN HEMT
    Tan, J.
    Yuk, K. S.
    Branner, G. R.
    2017 IEEE 18TH WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE (WAMICON), 2017,
  • [32] A High Efficiency 4-18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology
    Chen, Shuoqi
    Kumar, Vipan
    Cao, Yu
    2020 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2020,
  • [33] GaN HEMT Based Class-F Power Amplifier with Broad Bandwidth and High Efficiency
    Iqbal, Mustazar
    Piacibello, Anna
    PROCEEDINGS OF 2016 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM), 2016, : 131 - 134
  • [34] 0.5-2.5 GHz, 10W MMIC Power Amplifier in GaN HEMT Technology
    Krishnamurthy, K.
    Green, D.
    Vetury, R.
    Poulton, M.
    Martin, J.
    2009 ANNUAL IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2009 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2009, 2009, : 69 - 72
  • [35] A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology
    Campbell, Charles
    Lee, Cathy
    Williams, Victoria
    Kao, Ming-Yih
    Tserng, Hua-Quen
    Saunier, Paul
    2008 IEEE CSIC SYMPOSIUM, 2008, : 132 - 135
  • [36] A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology
    Campbell, Charles
    Lee, Cathy
    Williams, Victoria
    Kao, Ming-Yih
    Tserng, Hua-Quen
    Saunier, Paul
    Balisteri, Tony
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (10) : 2640 - 2647
  • [37] High-Efficiency GaN HEMT Power Amplifier Design Based on Inverse Class-E Topology
    Lee, Yong-Sub
    Lee, Mun-Woo
    Kam, Sang-Ho
    Jeong, Yoon-Ha
    2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, 2009, : 500 - 503
  • [38] A High Efficiency Compact Class F GaN MMIC Power Amplifier for 5G Applications
    Joshi, Rachit
    Liu, Min-Hsin
    Hsu, Shawn S. H.
    2020 50TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2020, : 1103 - 1106
  • [39] MMIC power amplifier based on AlGaN/GaN HEMTs at 10GHz
    Behtash, R
    Tobler, H
    Berlec, FJ
    Ziegler, V
    Leier, H
    Balmer, RS
    Martin, T
    Neuburger, M
    Schumacher, H
    ELECTRONICS LETTERS, 2004, 40 (09) : 564 - 566
  • [40] A High Efficiency Compact Class F GaN MMIC Power Amplifier for 5G Applications
    Joshi, Rachit
    Liu, Min-Hsin
    Hsu, Shawn S. H.
    2020 50TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2020,
12345