Characterization of P-Channel FOI-MAHAS Charge Trapping Memory with Improved Operation Characteristics

In order to enhance scalability, performance and operation efficiency for future embedded flash memory, p-channel fin-on-insulator (FOI) FinFET charge trapping memory devices with HfO2 charge trapping layer, Al2O3 tunneling layer and blocking layers as well as [TiN/W] metal gate (Metal/Al2O3/HfO2/Al2O3/Si, named as MAHAS) have been successfully fabricated. Afterwards, we systematically investigate the static electrical performance, program/erase speeds, date retention and endurance characteristics of the FOI-MAHAS memory with p-channel. A larger memory window, lower program/erase (PIE) voltages, enhanced P/E speed, along with good data retention and endurance characteristics are experimentally realized. Therefore, the proposed p-channel FOI-MAHAS charge trapping memory is promising for future embedded flash memory applications.