Optically pumped type-II interband terahertz lasers

被引：17
|
作者：
Vurgaftman, I [1 ]
Meyer, JR [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 07期
关键词：
D O I：
10.1063/1.124547
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optically pumped terahertz lasers based on interband transitions in type-II antimonide heterostructures are proposed and modeled in detail. At cryogenic temperatures, the activated nature of the Auger and phonon-assisted mechanisms should provide substantially longer nonradiative lifetimes and higher gains than are attainable with intersubband devices. For emission at lambda=27 mu m, pulsed operation is projected up to 60 K, and > 25 mW of cw output power is calculated for T=30 K. At T=4 K, lasing is expected out to wavelengths as long as 100 mu m. (C) 1999 American Institute of Physics. [S0003-6951(99)04633-1].
引用
收藏
页码：899 / 901
页数：3
相关论文
共 50 条
  • [31] High-power low-threshold optically pumped type-II quantum-well lasers
    Lin, CH
    Murry, SJ
    Yang, RQ
    Pei, SS
    Le, HQ
    Yan, C
    Gianardi, DM
    McDaniel, DL
    Falcon, M
    INFRARED APPLICATIONS OF SEMICONDUCTORS II, 1998, 484 : 107 - 116
  • [32] Optically-Pumped Mid-Infrared Interband Cascade Lasers
    Olafsen, Linda J.
    Rumman, Nazifa
    PROCEEDINGS OF THE 2020 IEEE TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS (WMCS), 2020,
  • [33] Some issues in mid-IR type-II interband cascade lasers
    Yang, RQ
    Mu, YM
    IN-PLANE SEMICONDUCTOR LASERS III, 1999, 3628 : 104 - 112
  • [34] High-performance continuous wave type-II interband cascade lasers
    Yang, RQ
    Bradshaw, JL
    Bruno, JD
    Pham, JT
    Wortman, DE
    2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, 2000, : 125 - 126
  • [35] Mid-IR type-II InAs/GaInSb interband cascade lasers
    Bradshaw, JL
    Yang, RQ
    Bruno, JD
    Pham, JT
    Wortman, DE
    IN-PLANE SEMICONDUCTOR LASERS IV, 2000, 3947 : 129 - 135
  • [36] Interband type-II miniband-to-bound state diode lasers for the midinfrared
    Mermelstein, C
    Schmitz, J
    Kiefer, R
    Walther, M
    Wagner, J
    APPLIED PHYSICS LETTERS, 2004, 85 (04) : 537 - 539
  • [37] Recent progress of mid-IR type-II interband cascade lasers
    Lin, CH
    Hwang, WY
    Zaitsev, SV
    Um, J
    Kuo, CH
    Delaney, A
    Zheng, J
    Murry, SJ
    Liu, A
    Le, HQ
    Mu, Y
    Pei, SS
    INFRARED APPLICATIONS OF SEMICONDUCTORS III, 2000, 607 : 35 - 40
  • [38] Mid-infrared interband cascade lasers based on type-II heterostructures
    Yang, RQ
    MICROELECTRONICS JOURNAL, 1999, 30 (10) : 1043 - 1056
  • [39] Type-II interband cascade lasers emitting at wavelengths beyond 5.1 μm
    Hill, CJ
    Wong, CM
    Yang, B
    Yang, RQ
    ELECTRONICS LETTERS, 2004, 40 (14) : 878 - 879
  • [40] Optically Pumped Terahertz Amplitude Modulation in Type-II Ge QD/Si Heterostructures Grown via Molecular Beam Epitaxy
    Ghosh, Suprovat
    Mukherjee, Abir
    Singh, Sudarshan
    Ray, Samit K.
    Basu, Ananjan
    Manna, Santanu
    Das, Samaresh
    ACS APPLIED OPTICAL MATERIALS, 2024, 2 (10): : 2085 - 2091
12345