Optically pumped type-II interband terahertz lasers

被引：17
|
作者：
Vurgaftman, I [1 ]
Meyer, JR [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 07期
关键词：
D O I：
10.1063/1.124547
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optically pumped terahertz lasers based on interband transitions in type-II antimonide heterostructures are proposed and modeled in detail. At cryogenic temperatures, the activated nature of the Auger and phonon-assisted mechanisms should provide substantially longer nonradiative lifetimes and higher gains than are attainable with intersubband devices. For emission at lambda=27 mu m, pulsed operation is projected up to 60 K, and > 25 mW of cw output power is calculated for T=30 K. At T=4 K, lasing is expected out to wavelengths as long as 100 mu m. (C) 1999 American Institute of Physics. [S0003-6951(99)04633-1].
引用
收藏
页码：899 / 901
页数：3
相关论文
共 50 条
  • [21] Optically pumped terahertz semiconductor bulk lasers
    Pavlov, SG
    Hübers, HW
    Orlova, EE
    Zhukavin, RK
    Riemann, H
    Nakata, H
    Shastin, VN
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 235 (01): : 126 - 134
  • [22] An efficient cavity for optically pumped terahertz lasers
    Miao, Liang
    Zuo, Duluo
    Jiu, Zhixian
    Cheng, Zuhai
    OPTICS COMMUNICATIONS, 2010, 283 (16) : 3171 - 3175
  • [23] Optically pumped mid-infrared type-II lasers: Advances in high-temperature performance
    Felix, CL
    Bewley, WW
    Aifer, EH
    Vurgaftman, I
    Olafsen, LJ
    Stokes, DW
    Meyer, JR
    Yang, MJ
    Lee, H
    Martinelli, RU
    Connolly, JC
    Sugg, AR
    Olsen, GH
    IN-PLANE SEMICONDUCTOR LASERS III, 1999, 3628 : 130 - 139
  • [24] High-power optically pumped type-II QW lasers grown on GaAs compliant substrate
    Murry, SJ
    Zheng, J
    Kuo, CH
    Lin, CH
    Le, HQ
    Pei, SS
    IN-PLANE SEMICONDUCTOR LASERS IV, 2000, 3947 : 136 - 143
  • [25] Power, efficiency, and thermal characteristics of type-II interband cascade lasers
    Yang, RQ
    Bradshaw, JL
    Bruno, JD
    Pham, JT
    Wortman, DE
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (02) : 282 - 289
  • [26] Lifetimes and Auger coefficients in type-II W interband cascade lasers
    Bewley, W. W.
    Lindle, J. R.
    Kim, C. S.
    Kim, M.
    Canedy, C. L.
    Vurgaftman, I.
    Meyer, J. R.
    APPLIED PHYSICS LETTERS, 2008, 93 (04)
  • [27] Mid-IR type-II interband cascade lasers and their applications
    Yang, RQ
    Hill, CJ
    Christensen, LE
    Webster, CR
    SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES, 2005, 5624 : 413 - 422
  • [28] Modeling of mid-IR type-II interband cascade lasers
    Mu, YM
    Lin, CH
    Pei, SS
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 : 345 - 352
  • [29] Terahertz emission spectra of optically pumped silicon lasers
    Hübers, HW
    Pavlov, SG
    Greiner-Bär, M
    Rümmeli, MH
    Kimmitt, MF
    Zhukavin, RK
    Riemann, H
    Shastin, VN
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 233 (02): : 191 - 196
  • [30] Frequency tunability of optically pumped terahertz silicon lasers
    Pavlov, Sergey G.
    Boettger, Ute
    Huebers, Heinz-Wilhelm
    Kimmitt, Maurice F.
    Zhukavin, Roman Kh.
    Kovalevsky, Konstantin A.
    Tsyplenkov, Veniamin V.
    Abrosimov, Nikolay V.
    Noetzel, Natalia
    Riemann, Helge
    Shastin, Valery N.
    2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2, 2007, : 138 - +
12345