Ultralong Silicon Grains Grown by Excimer Laser Crystallization

被引：7

作者：

Shimoto, Shigeyuki ^{[1
]}

Katou, Tomoya ^{[1
]}

Endo, Takahiko ^{[1
]}

Taniguchi, Yukio ^{[1
]}

Ohno, Takashi ^{[1
]}

Azuma, Kazufumi ^{[1
]}

Matsumura, Masakiyo ^{[1
]}

机构：

[1] Adv LCD Technol Dev Ctr Co Ltd ALTEDEC, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 10期

关键词：

polysilicon; LTPS; excimer laser annealing; lateral growth; phase modulator; thin-film transistor; system on glass;

D O I：

10.1143/JJAP.47.7793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The factors affecting the elongation of Si grains were investigated for the excimer-laser-induced lateral grain growth method. The length of Si grains was found to depend on the laser light intensity profile, the waveform of the laser light pulse, particularly at its tail region, and the sample structure. Grains as long as 25 mu m were successfully grown at room temperature using it combination of a V-shaped light intensity profile, a light pulse waveform with a long tail, and a stacked sample structure with a cap layer. Grains of 11 mu m in length were also grown in a capless sample. [DOI: 10.1143/JJAP.47.7793]

引用

页码：7793 / 7797

页数：5

共 50 条

[21] Solidification velocity in liquid silicon during excimer laser crystallization
Kuo, Chil-Chyuan
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 95 (02): : 573 - 578
[22] Nanocrystalline silicon solar cells from excimer laser crystallization of amorphous silicon
Adikaari, A. A. D. T.
Mudugamuwa, N. K.
Silva, S. R. P.
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2008, 92 (06) : 634 - 638
[23] Excimer laser patterning of epitaxial YSZ films grown on silicon
Sánchez, F
Benítez, F
Varela, M
VACUUM, 2002, 65 (01) : 115 - 118
[24] ⟨100⟩-textured self-assembled square-shaped polycrystalline silicon grains by multiple shot excimer laser crystallization
He, Ming
Ishihara, Ryoichi
Metselaar, Wim
Beenakker, Kees
JOURNAL OF APPLIED PHYSICS, 2006, 100 (08)
[25] Effect of cooling rate on excimer laser crystallization of silicon thin films
Tanabe, H
NEC RESEARCH & DEVELOPMENT, 2000, 41 (02): : 202 - 206
[26] Preparation of nanocrystalline silicon films by excimer laser-induced crystallization
Fu, GS
Yu, W
Li, SQ
Peng, YC
Han, L
APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS, 2002, 4905 : 438 - 441
[27] Excimer laser crystallization of amorphous silicon carbide produced by ion implantation
Hedler, A
Urban, S
Falk, F
Hobert, H
Wesch, W
APPLIED SURFACE SCIENCE, 2003, 205 (1-4) : 240 - 248
[28] Characterization of polycrystalline silicon thin films fabricated by excimer laser crystallization
Kuo, Chil-Chyuan
JOURNAL OF RUSSIAN LASER RESEARCH, 2007, 28 (04) : 383 - 392
[29] EXCIMER-LASER-INDUCED CRYSTALLIZATION OF HYDROGENATED AMORPHOUS-SILICON
WINER, K
ANDERSON, GB
READY, SE
BACHRACH, RZ
JOHNSON, RI
PONCE, FA
BOYCE, JB
APPLIED PHYSICS LETTERS, 1990, 57 (21) : 2222 - 2224
[30] Excimer laser crystallization of amorphous silicon on metal coated glass substrates
Brendel, K
Nickel, NH
Lengsfeld, P
Schöpke, A
Sieber, I
Nerding, M
Strunk, HP
Fuhs, W
THIN SOLID FILMS, 2003, 427 (1-2) : 86 - 90

← 1 2 3 4 5 →