Characterization of polycrystalline silicon thin films fabricated by excimer laser crystallization

Phase transformation mechanisms during excimer laser crystallization and analysis of the resulting microstructures of polycrystalline silicon have been investigated in detail using in-situ time-resolved optical reflection and transmission measurements, field-emission scanning electron microscopy, high-resolution transmission electron microscopy, atomic force microscopy, and micro-Raman spectroscopy. Grain size, surface roughness, crystallinity, and melt-phase duration as functions of various excimer laser fluences are determined. A detailed microstructure development model of Si thin films upon complete melting using excimer laser irradiation is proposed. The results of this work can help in the development and fabrication of singular-grain Si thin film transistors.