Metastable CdSe/MgSe quantum wells prepared by MBE with near IR intersubband absorption

被引：7

作者：

Shen, Aidong ^{[1
]}

Chen, Guopeng ^{[1
]}

Zhao, Kuaile ^{[1
]}

Lai, Jung-Tso ^{[1
]}

Tamargo, Maria C. ^{[2
]}

机构：

[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA

[2] CUNY City Coll, Dept Chem, New York, NY 10031 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 03期

基金：

美国国家科学基金会;

关键词：

ALL-OPTICAL SWITCH; SATURATION; TRANSITIONS; ENERGY;

D O I：

10.1116/1.4789478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report, for the first time, the growth of a metastable CdSe/MgSe quantum well structure by molecular beam epitaxy. The structure was grown on InP substrate with thin ZnCdSe and InGaAs buffers. To maintain the zincblende structure of MgSe (which naturally favors rocksalt structure), a ZnCdSe spacer layer was inserted between CdSe/MgSe quantum wells. The structural and optical properties of the sample were characterized by high-resolution x-ray diffraction and photoluminescence measurements. Intersubband transitions in the near infrared region were observed. (C) 2013 American Vacuum Society.

引用

页数：3

共 50 条

[41] Intersubband absorption in Nb-clad InAs quantum wells
Eckhause, TA
Tsujino, S
Gwinn, EG
Thomas, M
Kroemer, H
PHYSICA E, 2000, 6 (1-4): : 856 - 859
[42] INTERSUBBAND ABSORPTION IN (HG, CD)TE QUANTUM-WELLS
CHATTOPADHYAY, D
RAKSHIT, PC
SOLID STATE COMMUNICATIONS, 1992, 82 (02) : 117 - 119
[43] Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells
Machhadani, H.
Beeler, M.
Sakr, S.
Warde, E.
Kotsar, Y.
Tchernycheva, M.
Chauvat, M. P.
Ruterana, P.
Nataf, G.
De Mierry, Ph
Monroy, E.
Julien, F. H.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (14)
[44] Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
Iizuka, N
Kaneko, K
Suzuki, N
APPLIED PHYSICS LETTERS, 2002, 81 (10) : 1803 - 1805
[45] IR studies of p-type Si/SiGe quantum wells: Intersubband absorption, IR detectors, and second-harmonic generation
Helm, M
Kruck, P
Fromherz, T
Weichselbaum, A
Seto, M
Bauer, G
Moussa, Z
Boucaud, P
Julien, FH
Lourtioz, JM
Nutzel, JF
Abstreiter, G
THIN SOLID FILMS, 1997, 294 (1-2) : 330 - 335
[46] Sensitivity of the Linear and Nonlinear Optical Properties to an Electric Field and Doping Density in CdSe/MgSe Single Quantum Wells
Jbeli, Anouar
JOURNAL OF ELECTRONIC MATERIALS, 2024, 53 (09) : 5421 - 5432
[47] Absorption saturation of near-infrared intersubband transition in lattice-matched InGaAs/AlAsSb quantum wells
Neogi, A
Yoshida, H
Mozume, T
Georgiev, N
Akiyama, T
Wada, O
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 7 (1-2): : 183 - 186
[48] Photo-induced intersubband absorption in Si/SiGe quantum wells
Boucaud, P
Gao, L
Visocekas, F
Moussa, Z
Lourtioz, JM
Julien, FH
Sagnes, I
Campidelli, Y
Badoz, PA
Vagos, P
JOURNAL OF CRYSTAL GROWTH, 1995, 157 (1-4) : 227 - 230
[49] PHOTOINDUCED INTERSUBBAND ABSORPTION IN NORMAL-DOPED QUANTUM-WELLS
GARINI, Y
COHEN, E
RON, A
EHRENFREUND, E
LAW, KK
MERZ, JL
GOSSARD, AC
JOURNAL OF LUMINESCENCE, 1992, 53 (1-6) : 288 - 292
[50] Floquet states and intersubband absorption in strongly driven double quantum wells
Fromherz, T
PHYSICAL REVIEW B, 1997, 56 (08): : 4772 - 4777

← 1 2 3 4 5 →