Metastable CdSe/MgSe quantum wells prepared by MBE with near IR intersubband absorption

被引：7

作者：

Shen, Aidong ^{[1
]}

Chen, Guopeng ^{[1
]}

Zhao, Kuaile ^{[1
]}

Lai, Jung-Tso ^{[1
]}

Tamargo, Maria C. ^{[2
]}

机构：

[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA

[2] CUNY City Coll, Dept Chem, New York, NY 10031 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 03期

基金：

美国国家科学基金会;

关键词：

ALL-OPTICAL SWITCH; SATURATION; TRANSITIONS; ENERGY;

D O I：

10.1116/1.4789478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report, for the first time, the growth of a metastable CdSe/MgSe quantum well structure by molecular beam epitaxy. The structure was grown on InP substrate with thin ZnCdSe and InGaAs buffers. To maintain the zincblende structure of MgSe (which naturally favors rocksalt structure), a ZnCdSe spacer layer was inserted between CdSe/MgSe quantum wells. The structural and optical properties of the sample were characterized by high-resolution x-ray diffraction and photoluminescence measurements. Intersubband transitions in the near infrared region were observed. (C) 2013 American Vacuum Society.

引用

页数：3

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