Energy sensitization in erbium-doped silicon-rich oxide films annealed at low temperatures

被引：0

作者：

Dal Negro, L ^{[1
]}

Stolfi, M ^{[1
]}

Michel, J ^{[1
]}

Le Blanc, J ^{[1
]}

Haavisto, J ^{[1
]}

Kimerling, LC ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

来源：

2005 2ND IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2005年

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Si-rich SiO2 films (SRO) and Er-doped, Si-rich SiO2 films (Er:SRO) were deposited by reactive RF magnetron co-sputtering followed by thermal annealing in a nitrogen atmosphere in order to investigate the optimum condition for efficient 1.54 mu m emission. Reference Er in stoichiometric SiO2 (Er:SiO2) films were deposited for comparison. The room temperature photoluminescence intensity of SRO films without Er was found to be maximized at 38 at% Si after annealing at 1100 degrees C for 1 hour. On the contrary, we found that the maximized Er photoluminescence of Er:SRO with 38 at% Si and an Er concentration of 10(20) cm(-3) occurred for annealing temperatures between 600 degrees C and 800 degrees C. Under these conditions the 1.54 mu m Er emission is enhanced by more than two orders of magnitude relative to Er:SiO2 samples while negligible SRO emission is observed.

引用

页码：87 / 89

页数：3

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