Energy sensitization in erbium-doped silicon-rich oxide films annealed at low temperatures

被引：0
|
作者：
Dal Negro, L [1 ]
Stolfi, M [1 ]
Michel, J [1 ]
Le Blanc, J [1 ]
Haavisto, J [1 ]
Kimerling, LC [1 ]
机构：
[1] MIT, Cambridge, MA 02139 USA
来源：
2005 2ND IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2005年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Si-rich SiO2 films (SRO) and Er-doped, Si-rich SiO2 films (Er:SRO) were deposited by reactive RF magnetron co-sputtering followed by thermal annealing in a nitrogen atmosphere in order to investigate the optimum condition for efficient 1.54 mu m emission. Reference Er in stoichiometric SiO2 (Er:SiO2) films were deposited for comparison. The room temperature photoluminescence intensity of SRO films without Er was found to be maximized at 38 at% Si after annealing at 1100 degrees C for 1 hour. On the contrary, we found that the maximized Er photoluminescence of Er:SRO with 38 at% Si and an Er concentration of 10(20) cm(-3) occurred for annealing temperatures between 600 degrees C and 800 degrees C. Under these conditions the 1.54 mu m Er emission is enhanced by more than two orders of magnitude relative to Er:SiO2 samples while negligible SRO emission is observed.
引用
收藏
页码：87 / 89
页数：3
相关论文
共 50 条
  • [31] Modelling and design of an electrically-pumped DFB laser based on an erbium-doped silicon-rich silicon oxide layer embedded in a slot waveguide
    Dell'Olio, F.
    Gadaleta, M.
    Tatoli, T.
    Ciminelli, C.
    2014 THIRD MEDITERRANEAN PHOTONICS CONFERENCE, 2014,
  • [32] Spectroscopic studies of Nd3+-doped silicon-rich silicon oxide films
    Breard, D.
    Gourbilleau, F.
    Dufour, C.
    Rizk, R.
    Doualan, J. -L.
    Camy, P.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2008, 146 (1-3): : 179 - 182
  • [33] Thermal annealing effects on photoluminescence properties of carbon-doped silicon-rich oxide thin films implanted with erbium
    Nikas, Vasileios
    Gallis, Spyros
    Huang, Mengbing
    Kaloyeros, Alain E.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (09)
  • [34] Sensitization of erbium through silicon nanocrystals in silicon rich oxide
    Huda, M. Q.
    OPTICAL COMPONENTS AND MATERIALS IX, 2012, 8257
  • [35] Silicon nanocrystal formation in annealed silicon-rich silicon oxide films prepared by plasma enhanced chemical vapor deposition
    Daldosso, N.
    Das, G.
    Larcheri, S.
    Mariotto, G.
    Dalba, G.
    Pavesi, L.
    Irrera, A.
    Priolo, F.
    Iacona, F.
    Rocca, F.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)
  • [36] Multilevel sensitization of Er3+ in low-temperature-annealed silicon-rich SiO2
    Savchyn, Oleksandr
    Todi, Ravi M.
    Coffey, Kevin R.
    Kik, Pieter G.
    APPLIED PHYSICS LETTERS, 2008, 93 (23)
  • [37] Properties of Erbium-Doped Silicon Oxycarbide Thin Films
    Garcia, Ivan
    Morales, Crisoforo
    Rosendo, Enrique
    Perez, Maria
    Coyopol, Antonio
    Galeazzi, Reina
    Garcia, Godofredo
    Romano, Roman
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2023, 12 (12)
  • [38] Silicon-rich silicon oxide films boost UV sensitivity
    Berman-Mendoza, D
    Aceves-Mijares, M
    Berriel-Valdos, LR
    Carranza, J
    Pedraza, J
    Domínguez-Horna, C
    Falcony, C
    LASER FOCUS WORLD, 2005, 41 (09): : 103 - 105
  • [39] Erbium-thulium interaction in broadband infrared luminescent silicon-rich silicon oxide
    Seo, SY
    Shin, JH
    Bae, BS
    Park, N
    Penninkhof, JJ
    Polman, A
    APPLIED PHYSICS LETTERS, 2003, 82 (20) : 3445 - 3447
  • [40] Characterisation of thin LPCVD silicon-rich oxide films
    Ristic, D.
    Ivanda, M.
    Marcius, M.
    Holy, V.
    Siketic, Z.
    Bogdanovic-Rakovic, I.
    Gamulin, O.
    Furic, K.
    Ristic, M.
    Music, S.
    Buljan, M.
    Ferrari, M.
    Chiasera, A.
    Chiappini, A.
    Righini, G. C.
    INTEGRATED PHOTONICS: MATERIALS, DEVICES, AND APPLICATIONS, 2011, 8069
12345