Energy sensitization in erbium-doped silicon-rich oxide films annealed at low temperatures

被引：0
|
作者：
Dal Negro, L [1 ]
Stolfi, M [1 ]
Michel, J [1 ]
Le Blanc, J [1 ]
Haavisto, J [1 ]
Kimerling, LC [1 ]
机构：
[1] MIT, Cambridge, MA 02139 USA
来源：
2005 2ND IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2005年
关键词：
D O I：
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中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Si-rich SiO2 films (SRO) and Er-doped, Si-rich SiO2 films (Er:SRO) were deposited by reactive RF magnetron co-sputtering followed by thermal annealing in a nitrogen atmosphere in order to investigate the optimum condition for efficient 1.54 mu m emission. Reference Er in stoichiometric SiO2 (Er:SiO2) films were deposited for comparison. The room temperature photoluminescence intensity of SRO films without Er was found to be maximized at 38 at% Si after annealing at 1100 degrees C for 1 hour. On the contrary, we found that the maximized Er photoluminescence of Er:SRO with 38 at% Si and an Er concentration of 10(20) cm(-3) occurred for annealing temperatures between 600 degrees C and 800 degrees C. Under these conditions the 1.54 mu m Er emission is enhanced by more than two orders of magnitude relative to Er:SiO2 samples while negligible SRO emission is observed.
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页码：87 / 89
页数：3
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