FORMATION AND PROPERTIES OF HETEROJUNCTIONS BASED ON THIN FILMS OF MAGNETIC OXIDES

被引：0

作者：

Vengalis, B. ^{[1
]}

Oginskis, A. K. ^{[1
]}

Lisauskas, V. ^{[1
]}

Sliuziene, K. ^{[1
]}

Grigaliunaite-Vonseviciene, G.

Cerniuke, I. ^{[1
]}

Maneikis, A. ^{[1
]}

机构：

[1] Ctr Phys Sc & Technol, Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

RADIATION INTERACTION WITH MATERIAL AND ITS USE IN TECHNOLOGIES 2012 | 2012年

关键词：

heterostructures; manganites; thin film growth; MANGANITES;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The heterostructures were prepared by growing thin films of manganites, La(2/3)A(1/3)MnO(3) (A=Ca, Sr, Ba), on Nb-doped SrTiO3 and n-Si substrates. They all demonstrated nonlinear current-voltage (I-U) characteristics with clearly defined rectifying behavior. Introducing of ultrathin interlaying YSZ and LaMnO3 layers were found to reduce shunting resistance and to improve electrical properties of the heterodiodes. The measured I-U relations have been modeled to elucidate dominating carrier transport mechanisms in the heterostructures and to define their possible use for applications.

引用

页码：61 / 64

页数：4

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