FORMATION AND PROPERTIES OF HETEROJUNCTIONS BASED ON THIN FILMS OF MAGNETIC OXIDES

The heterostructures were prepared by growing thin films of manganites, La(2/3)A(1/3)MnO(3) (A=Ca, Sr, Ba), on Nb-doped SrTiO3 and n-Si substrates. They all demonstrated nonlinear current-voltage (I-U) characteristics with clearly defined rectifying behavior. Introducing of ultrathin interlaying YSZ and LaMnO3 layers were found to reduce shunting resistance and to improve electrical properties of the heterodiodes. The measured I-U relations have been modeled to elucidate dominating carrier transport mechanisms in the heterostructures and to define their possible use for applications.