Optical and electrical characterization of α-InGaZnO thin film fabricated by pulsed laser deposition for thin film transistor applications

被引：12

作者：

Yuan, Longyan ^{[1
,2
]}

Fang, Guojia ^{[1
,2
]}

Zou, Xiao ^{[1
,2
]}

Huang, Huihui ^{[1
,2
]}

Zou, Hai ^{[1
,2
]}

Han, Xiangyun ^{[3
]}

Gao, Yihua ^{[3
]}

Xu, Sheng ^{[1
,2
]}

Zhao, Xingzhong ^{[1
,2
]}

机构：

[1] Wuhan Univ, Sch Phys Sci & Technol, Minist Educ, Key Lab Acoust & Photon Mat & Devices, Wuhan 430072, Peoples R China

[2] Wuhan Univ, Sch Phys Sci & Technol, Dept Elect Sci & Technol, Wuhan 430072, Peoples R China

[3] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 21期

关键词：

AMORPHOUS OXIDE SEMICONDUCTORS; HIGH-MOBILITY; TRANSPARENT; TEMPERATURE; TRANSPORT;

D O I：

10.1088/0022-3727/42/21/215301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly transparent and amorphous InGaZnO thin films with high mobility were deposited on fused silica by pulsed laser deposition. The films remained amorphous after annealing at 700 degrees C and had bandgaps in the range 3.50-3.62 eV. The film deposited at 5 Pa and room temperature exhibits a Hall mobility of 54 cm(2) V-1 s(-1). An alpha-InGaZnO thin film transistor with high-k Ba0.6Sr0.4TiO3 as a dielectric layer and operating in enhanced mode with a saturation mobility of 5.8 cm(2) V-1 s(-1) and on/off ratio of 2 x 10(5) is demonstrated.

引用

页数：6

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