Optical and electrical characterization of α-InGaZnO thin film fabricated by pulsed laser deposition for thin film transistor applications

被引：12
|
作者：
Yuan, Longyan [1 ,2 ]
Fang, Guojia [1 ,2 ]
Zou, Xiao [1 ,2 ]
Huang, Huihui [1 ,2 ]
Zou, Hai [1 ,2 ]
Han, Xiangyun [3 ]
Gao, Yihua [3 ]
Xu, Sheng [1 ,2 ]
Zhao, Xingzhong [1 ,2 ]
机构：
[1] Wuhan Univ, Sch Phys Sci & Technol, Minist Educ, Key Lab Acoust & Photon Mat & Devices, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Sch Phys Sci & Technol, Dept Elect Sci & Technol, Wuhan 430072, Peoples R China
[3] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 21期
关键词：
AMORPHOUS OXIDE SEMICONDUCTORS; HIGH-MOBILITY; TRANSPARENT; TEMPERATURE; TRANSPORT;
D O I：
10.1088/0022-3727/42/21/215301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly transparent and amorphous InGaZnO thin films with high mobility were deposited on fused silica by pulsed laser deposition. The films remained amorphous after annealing at 700 degrees C and had bandgaps in the range 3.50-3.62 eV. The film deposited at 5 Pa and room temperature exhibits a Hall mobility of 54 cm(2) V-1 s(-1). An alpha-InGaZnO thin film transistor with high-k Ba0.6Sr0.4TiO3 as a dielectric layer and operating in enhanced mode with a saturation mobility of 5.8 cm(2) V-1 s(-1) and on/off ratio of 2 x 10(5) is demonstrated.
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收藏
页数：6
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