ReRAM-based In-Memory Computation of Galois Field arithmetic

被引:0
|
作者
Mandal, Swagata [1 ]
Bhattacharjee, Debjyoti [1 ]
Tavva, Yaswanth [1 ]
Chattopadhyay, Anupam [1 ]
机构
[1] Nanyang Technol Univ, Sch Comp Sci & Engn, Singapore, Singapore
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Robust data communication is a prime need in the age of Internet-of-things (IoT), where multiple connected devices actively exchange information. To permit robustness of this information exchange, error resilient secure communication is necessary. Security, error detection as well as correction are fundamentally based on Galois Field (GF) arithmetic. In this work, we present a novel method for performing GF arithmetic on a state-of-the art ReRAM-based in-memory computing platform. ReRAM devices offer low leakage power, high endurance and non-volatile storage capabilities, coupled with stateful logic operations. The proposed lightweight library presents the mapping of GF element generation, addition and multiplication. We have experimentally verified the results. For GF(2(4)), 3.8 nJ, 0.1 nJ and 3.1 nJ energy are required for element generation, addition and multiplication operations respectively, which demonstrates the efficacy of the mapping.
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页码:1 / 6
页数:6
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