RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer

被引：7
|
作者：
Kakuda, M. [1 ]
Morikawa, S. [1 ]
Kuboya, S. [1 ]
Katayama, R. [2 ]
Yaguchi, H. [3 ]
Onabe, K. [1 ]
机构：
[1] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] Saitama Univ, Grad Sch Sci & Engn, Sakura Ku, Saitama 3388570, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2013年 / 378卷
关键词：
Crystal structure; High resolution X-ray diffraction; Reflection high energy electron diffraction; Molecular beam epitaxy; Nitrides; MOLECULAR-BEAM EPITAXY; FILMS;
D O I：
10.1016/j.jcrysgro.2012.12.120
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We fabricated cubic AlN (c-AlN) films on MgO (001) substrates via 2-step c-GaN buffer layer by radio-frequency-plasma-assisted molecular beam epitaxy (RF-MBE). The effect of low temperature c-GaN buffer layer on the surface flatness and crystal quality of c-AlN was investigated by AFM and XRD reciprocal space mapping analysis. We examined optical properties of the c-AlN film by spectroscopic ellipsometry. The absorption edge by the direct transition of the c-AlN film was 5.95 eV caused by the hexagonal phase incorporation. (c) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：307 / 309
页数：3
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