AlInN/GaN diodes for power electronic devices

被引：6

作者：

Peart, Matthew R. ^{[1
]}

Borovac, Damir ^{[1
]}

Sun, Wei ^{[1
]}

Song, Renbo ^{[1
]}

Tansu, Nelson ^{[1
]}

Wierer, Jonathan J., Jr. ^{[1
]}

机构：

[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Photon & Nanoelect, 7 Asa Dr, Bethlehem, PA 18015 USA

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 09期

基金：

美国国家科学基金会;

关键词：

AlInN; GaN; ultra-wide bandgap; power electronics; GAN;

D O I：

10.35848/1882-0786/abb180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlInN/GaN power diodes consisting of a p-type GaN and a 300 nm thick n-type AlInN drift layer are demonstrated. The p-n junction is grown using metalorganic chemical vapor deposition, and the AlxIn1-xN drift layer is lattice-matched to GaN (x similar to 0.82) with an electron concentration of similar to 8 x 10(16) cm(-3)after correcting for the 2-dimensional electron gas. The diodes exhibit similar to-60 V blocking capability. Under forward bias, the diode has a turn-on voltage of similar to 4 V. If experimental challenges are overcome, the ultrawide bandgap and high mobility of an AlInN drift layer could increase the performance of GaN-based power devices.

引用

页数：4

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