AlInN/GaN diodes for power electronic devices

被引：6

作者：

Peart, Matthew R. ^{[1
]}

Borovac, Damir ^{[1
]}

Sun, Wei ^{[1
]}

Song, Renbo ^{[1
]}

Tansu, Nelson ^{[1
]}

Wierer, Jonathan J., Jr. ^{[1
]}

机构：

[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Photon & Nanoelect, 7 Asa Dr, Bethlehem, PA 18015 USA

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 09期

基金：

美国国家科学基金会;

关键词：

AlInN; GaN; ultra-wide bandgap; power electronics; GAN;

D O I：

10.35848/1882-0786/abb180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlInN/GaN power diodes consisting of a p-type GaN and a 300 nm thick n-type AlInN drift layer are demonstrated. The p-n junction is grown using metalorganic chemical vapor deposition, and the AlxIn1-xN drift layer is lattice-matched to GaN (x similar to 0.82) with an electron concentration of similar to 8 x 10(16) cm(-3)after correcting for the 2-dimensional electron gas. The diodes exhibit similar to-60 V blocking capability. Under forward bias, the diode has a turn-on voltage of similar to 4 V. If experimental challenges are overcome, the ultrawide bandgap and high mobility of an AlInN drift layer could increase the performance of GaN-based power devices.

引用

页数：4

共 50 条

[11] Improved Schottky barrier characteristics for AlInN/GaN diodes by oxygen plasma treatment
Yang, Lianhong
Zhang, Baohua
Li, Yanqing
Chen, Dunjun
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 74 : 42 - 45
[12] Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics
Gonschorek, M.
Carlin, J. -F.
Feltin, E.
Py, M. A.
Grandjean, N.
JOURNAL OF APPLIED PHYSICS, 2011, 109 (06)
[13] Performances of AlInN/GaN HEMTs for Power Applications at Microwave Frequencies
Jardel, O.
Callet, G.
Dufraisse, J.
Sarazin, N.
Chartier, E.
Reveyrand, T.
Oualli, M.
Lancereau, D.
Poisson, M. A. Di Forte
Piotrowicz, S.
Morvan, E.
Delage, S. L.
2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2010, : 49 - 52
[14] GaN Power Schottky Diodes
Tompkins, R. P.
Smith, J. R.
Zhou, S.
Kirchner, K. W.
Derenge, M. A.
Jones, K. A.
Leach, J. H.
Mulholland, G.
Udwary, K.
Preble, E.
Suvarna, P.
Tungare, M.
Shahedipour-Sandvik, F.
WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 13, 2012, 45 (07): : 17 - 25
[15] New GaN electronic devices
不详
ADVANCED MATERIALS, 2000, 12 (07) : 479 - 479
[16] Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors
Saidi, I.
Mejri, H.
Baira, M.
Maaref, H.
SUPERLATTICES AND MICROSTRUCTURES, 2015, 84 : 113 - 125
[17] Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices
Peart, Matthew R.
Wei, Xiongliang
Borovac, Damir
Sun, Wei
Tansu, Nelson
Wierer, Jonathan J., Jr.
ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (08) : 1367 - 1371
[18] Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics
Lee, SH
Lee, HH
Jung, JJ
Moon, YB
Kim, TH
Baek, JH
Yu, YM
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (12): : 2795 - 2798
[19] Vertical Power Diodes in Bulk GaN
Disney, Don
Nie, Hui
Edwards, Andrew
Bour, David
Shah, Hemal
Kizilyalli, Isik C.
2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2013, : 59 - 62
[20] Applications of GaN microwave electronic devices
Nuttinck, S
Gebara, E
Banerjee, B
Venkataraman, S
Laskar, J
Harris, HM
IEICE TRANSACTIONS ON ELECTRONICS, 2003, E86C (08): : 1409 - 1415

← 1 2 3 4 5 →