28V planar GaAs MESFETs for wireless base-station power amplifiers

被引：0

作者：

Yang, B ^{[1
]}

Halder, S ^{[1
]}

Ye, PD ^{[1
]}

Daum, G ^{[1
]}

Dai, W ^{[1
]}

Frei, M ^{[1
]}

Ng, K ^{[1
]}

Bude, J ^{[1
]}

Hwang, JCM ^{[1
]}

Wilk, G ^{[1
]}

机构：

[1] Agere Syst, Allentown, PA 18109 USA

来源：

2005 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST | 2005年

关键词：

breakdown voltage; planar MESFET; linearity; intermodulation product;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports DC and RF characteristics of a high-voltage planar GaAs MESFET. Its breakdown voltages are over 65V at off state (V(gs) = -1.5V) and 30V at on state (V(gs) = 0.5 V). Under 28V drain bias and 1.9GHz input, the power density reaches 1.0 W/mm with greater than 14dB linear gain. The third-order intermodulation product is -34dBc with 1dB back off from 1dB gain compression. These results suggest that the planar GaAs MESFET may be used as high-power and high-linearity RF power amplifiers in wireless base stations. The planar structure also makes it highly suitable for low-cost mass production.

引用

页码：244 / 247

页数：4

共 50 条

[21] Modeling and Design of RF Amplifiers for Envelope Tracking WCDMA Base-Station Applications
Jeong, Jinseong
Kimball, Donald F.
Kwak, Myoungbo
Hsia, Chin
Draxler, Paul
Asbeck, Peter M.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (09) : 2148 - 2159
[22] Efficiency ehancement of W-CDMA base-station envelope tracking power amplifiers via load modulation
Jeong, Jinho
Asbeck, Peter
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2007, 49 (08) : 1954 - 1957
[23] SINR Feedback-Based Integrated Base-Station Assignment, Diversity, and Power Control for Wireless Networks
Wang, Jui Teng
IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY, 2010, 59 (01) : 473 - 484
[24] A Study on the Vehicular Wireless Base-Station for In-Vehicle Wireless Sensor Network System
Yun, Doo Seop
Lee, Seung-Jun
Kim, Do Hyun
2014 INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATION TECHNOLOGY CONVERGENCE (ICTC), 2014, : 609 - 610
[25] Layer design for GaAs-based DHBTs enabling 28V high-power microwave applications
Maassdorf, A
Kurpas, P
Doser, W
Brunner, F
Bergunde, T
Blanck, H
Würfl, J
Weyers, M
Tränkle, G
2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 571 - 574
[26] Influence of climatic variables on wireless: case study Base-Station Receiver
Najarro Quintero, Rodolfo
Samaniego Mena, Eduardo
Fares Vagas, Freddy
Puris Caceres, Amilkar
ENFOQUE UTE, 2016, 7 (04): : 86 - 95
[27] Smart antennas in wireless communications: Base-station diversity and handset beamforming
Dietrich, CB
Stutzman, WL
Kim, BK
Dietze, K
IEEE ANTENNAS AND PROPAGATION MAGAZINE, 2000, 42 (05) : 142 - 151
[28] Electromigration behavior in Aluminum wires for power base-station applications
van der Wel, Paul J.
Otte, Rik
Roberts, Harry
de Bruijn, Frank
van Zuijlen, Albert
Merkus, Ben
2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2017,
[29] Optimization of Envelope Tracking Power Amplifier for Base-Station Applications
Kim, Jungjoon
Son, Jungwhan
Jee, Seunghoon
Kim, Seokhyeon
Kim, Bumman
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (04) : 1620 - 1627
[30] Challenges and opportunities for compound semiconductor devices in next generation wireless base station power amplifiers
Larson, L
Asbeck, P
Kimball, D
2005 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST, 2005, : 1 - 4

← 1 2 3 4 5 →