Nonvolatile electrical bistability and operating mechanism of memory devices based on CdSe/ZnS nanoparticle/polymer hybrid composites

被引：14
|
作者：
Li, Fushan [1 ]
Son, Dong Ick [1 ]
Kim, Bong Jun [1 ]
Kim, Tae Whan [1 ]
机构：
[1] Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期
关键词：
D O I：
10.1063/1.2959786
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Current-voltage (I-V) measurements on Al/(core/shell-type CdSe/ZnS nanoparticles embedded in polymer/indium tin oxide)/glass devices showed a nonvolatile electrical bistability behavior. Capacitance-voltage (C-V) measurements on the devices showed a counterclockwise hysteresis with a flatband voltage shift due to the existence of the CdSe/ZnS nanoparticles. The on/off ratio of the electrical bistability for memory devices with a hybrid [poly-N-vinylcarbazole (PVK) and polystyrene (PS)] matrix layer was larger than those for memory devices with a PVK or a PS layer. Possible operating mechanisms for the devices are described on the basis of the I-V and the C-V results. (C) 2008 American Institute of Physics.
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