Nonvolatile electrical bistability and operating mechanism of memory devices based on CdSe/ZnS nanoparticle/polymer hybrid composites

被引：14
|
作者：
Li, Fushan [1 ]
Son, Dong Ick [1 ]
Kim, Bong Jun [1 ]
Kim, Tae Whan [1 ]
机构：
[1] Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期
关键词：
D O I：
10.1063/1.2959786
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Current-voltage (I-V) measurements on Al/(core/shell-type CdSe/ZnS nanoparticles embedded in polymer/indium tin oxide)/glass devices showed a nonvolatile electrical bistability behavior. Capacitance-voltage (C-V) measurements on the devices showed a counterclockwise hysteresis with a flatband voltage shift due to the existence of the CdSe/ZnS nanoparticles. The on/off ratio of the electrical bistability for memory devices with a hybrid [poly-N-vinylcarbazole (PVK) and polystyrene (PS)] matrix layer was larger than those for memory devices with a PVK or a PS layer. Possible operating mechanisms for the devices are described on the basis of the I-V and the C-V results. (C) 2008 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots
    Ma, Zehao
    Ooi, Poh Choon
    Li, Fushan
    Yun, Dong Yeol
    Kim, Tae Whan
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (10) : 3962 - 3966
  • [22] Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots
    Zehao Ma
    Poh Choon Ooi
    Fushan Li
    Dong Yeol Yun
    Tae Whan Kim
    Journal of Electronic Materials, 2015, 44 : 3962 - 3966
  • [23] Facile and One-step Processible CdSe/ZnS Quantum Dots and Pentacene-based Nonvolatile Memory Device
    Kim, Sae-Wan
    Jung, In-Su
    Kang, Byoung-Ho
    Kwon, Jin-Beom
    Lee, Jae-Sung
    Lee, Sang-Won
    Kim, Ok-Sik
    Kim, Ju-Seong
    Bae, Jin-Hyuk
    Kang, Shin-Won
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2018, 18 (02) : 180 - 186
  • [24] Organic Field-Effect Transistor-Based Nonvolatile Memory Devices Having Controlled Metallic Nanoparticle/Polymer Composite Layers
    Kim, Yong-Mu
    Park, Young-Su
    O'Reilly, Andrew
    Lee, Jang-Sik
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (04) : H134 - H136
  • [25] The temperature-dependent physical and electrical characteristics of a polymer/RAFT-polymer stabilized nanoparticle system for organic nonvolatile memory
    Chen, Jun-Rong
    Lin, Heng-Tien
    Hwang, Gue-Wuu
    Chan, Yi-Jen
    Li, Pei-Wen
    NANOTECHNOLOGY, 2009, 20 (25)
  • [26] Current bistability and carrier transport mechanisms of organic bistable devices based on hybrid Ag nanoparticle-polymethyl methacrylate polymer nanocomposites
    Kim, Won Tae
    Jung, Jae Hun
    Kim, Tae Whan
    Son, Dong Ick
    APPLIED PHYSICS LETTERS, 2010, 96 (25)
  • [27] Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer
    Son, Dong-Ick
    Kim, Ji-Hwan
    Park, Dong-Hee
    Choi, Won Kook
    Li, Fushan
    Ham, Jung Hun
    Kim, Tae Whan
    NANOTECHNOLOGY, 2008, 19 (05)
  • [28] Electrical bistabilities and memory mechanisms of nonvolatile organic bistable devices based on exfoliated muscovite-type mica nanoparticle/poly(methylmethacrylate) nanocomposites
    Lim, Won Gyu
    Lee, Dea Uk
    Na, Han Gil
    Kim, Hyoun Woo
    Kim, Tae Whan
    APPLIED SURFACE SCIENCE, 2018, 432 : 228 - 232
  • [29] Pure red emission hybrid light-emitting devices based on the blend of CdSe/ZnS quantum dots and an n-type polymer
    Cheng, Gang
    Hu, Dehua
    Chen, Ping
    Duan, Yu
    Zhao, Yi
    Ma, Yuguang
    Liu, Shiyong
    THIN SOLID FILMS, 2012, 520 (24) : 7153 - 7156
  • [30] Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites
    Chen, Guilin
    Zhang, Peng
    Pan, Lulu
    Qi, Lin
    Yu, Fucheng
    Gao, Cunxu
    JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (37) : 9799 - 9805
12345