The challenges of sub-20nm shallow trench isolation etching

被引：0

作者：

Zhou, Hui ^{[1
]}

Ji, Xiaosong ^{[1
]}

Srinivasan, Sunil ^{[1
]}

He, Jim ^{[1
]}

Hua, Xuefeng ^{[1
]}

Agarwal, Ankur ^{[1
]}

Rauf, Shahid ^{[1
]}

Todorow, Valentin N. ^{[1
]}

Choi, Jinhan ^{[1
]}

Khan, Anisul ^{[1
]}

机构：

[1] Appl Mat Inc, Santa Clara, CA 95054 USA

来源：

SOLID STATE TECHNOLOGY | 2013年 / 56卷 / 04期

关键词：

PATTERN COLLAPSE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Major challenges for sub-20nm STI etching include intra-cell depth loading, across-wafer uniformity, etch profile control near the wafer edge, and propensity for pattern collapse.

引用

页码：14 / 18

页数：5

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