Study of viscoplastic deformation in porous organosilicate thin films for ultra low-k applications

被引:6
|
作者
Zin, Emil H. [1 ]
Bang, W. H. [1 ]
Ryan, E. Todd [2 ]
King, Sean W. [3 ]
Kim, Choong-Un [1 ,2 ]
机构
[1] Univ Texas Arlington, Arlington, TX 76019 USA
[2] GLOBALFOUNDRIES, Albany, NY 12203 USA
[3] Intel Corp, Log Technol Dev, Hillsboro, OR 97124 USA
关键词
PORE STRUCTURE; INDENTATION;
D O I
10.1063/1.4809827
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter reports experimental observations evidencing the viscoplasticity of porous organosilicate glass thin films under conditions pertinent to their application in advanced low-k/Cu interconnect technology. Specifically, it is found that porous SiCOH thin films exhibit a significant level of viscoplasticity with a rate sensitive to the porosity, the degree of plasma damage, and hydration reaction when tested using a ball indenter at 150-400 degrees C. The activation energy of the viscosity (1.25-1.45 eV) is measured to be far lower than the bulk glass (>4 eV), suggesting that the viscous flow is affected by the presence of defective bond-network such as Si-OH or Si-H bonds. (C) 2013 AIP Publishing LLC.
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页数:4
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