Study of viscoplastic deformation in porous organosilicate thin films for ultra low-k applications

被引：6

作者：

Zin, Emil H. ^{[1
]}

Bang, W. H. ^{[1
]}

Ryan, E. Todd ^{[2
]}

King, Sean W. ^{[3
]}

Kim, Choong-Un ^{[1
,2
]}

机构：

[1] Univ Texas Arlington, Arlington, TX 76019 USA

[2] GLOBALFOUNDRIES, Albany, NY 12203 USA

[3] Intel Corp, Log Technol Dev, Hillsboro, OR 97124 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 22期

关键词：

PORE STRUCTURE; INDENTATION;

D O I：

10.1063/1.4809827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports experimental observations evidencing the viscoplasticity of porous organosilicate glass thin films under conditions pertinent to their application in advanced low-k/Cu interconnect technology. Specifically, it is found that porous SiCOH thin films exhibit a significant level of viscoplasticity with a rate sensitive to the porosity, the degree of plasma damage, and hydration reaction when tested using a ball indenter at 150-400 degrees C. The activation energy of the viscosity (1.25-1.45 eV) is measured to be far lower than the bulk glass (>4 eV), suggesting that the viscous flow is affected by the presence of defective bond-network such as Si-OH or Si-H bonds. (C) 2013 AIP Publishing LLC.

引用

页数：4

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