Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride

被引：42
|
作者：
Ehrentraut, Dirk [1 ]
Kagamitani, Yuji [1 ]
Fukuda, Tsuguo [1 ]
Orito, Fumio [2 ]
Kawabata, Shinichiro [3 ]
Katano, Kizuku [3 ]
Terada, Shigeru [3 ]
机构：
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] MC Res & Innovat Ctr, Goleta, CA 93117 USA
[3] Mitsubishi Chem Corp, Ibaraki 3001295, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 17期
基金：
日本学术振兴会;
关键词：
ammonothermal crystal growth; gallium nitride;
D O I：
10.1016/j.jcrysgro.2008.06.017
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The acidic ammonothermal route is a latest development in the field of bulk crystal growth of GaN. We summarize our achievements obtained in this field, including an estimation of the theoretical possible maximum stable growth rate and the growth on a 2-in large GaN seed crystal. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：3902 / 3906
页数：5
相关论文
共 50 条
  • [41] Linear piezoelectricity material constants for ammonothermal gallium nitride measured by bulk acoustic waves
    Witczak, P.
    Witczak, Z.
    Jemielniak, R.
    Krysko, M.
    Krukowski, S.
    Bockowski, M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (03)
  • [42] Reviewing the Recent Developments in Idiopathic Intracranial Hypertension
    Virdee, Jasvir
    Larcombe, Stephanie
    Vijay, Vivek
    Sinclair, Alex J.
    Dayan, Margaret
    Mollan, Susan P.
    OPHTHALMOLOGY AND THERAPY, 2020, 9 (04) : 767 - 781
  • [43] Recent developments in nitride chemistry
    Niewa, R
    DiSalvo, FJ
    CHEMISTRY OF MATERIALS, 1998, 10 (10) : 2733 - 2752
  • [44] Reviewing the Recent Developments in Idiopathic Intracranial Hypertension
    Jasvir Virdee
    Stephanie Larcombe
    Vivek Vijay
    Alex J. Sinclair
    Margaret Dayan
    Susan P. Mollan
    Ophthalmology and Therapy, 2020, 9 : 767 - 781
  • [45] Reviewing Recent Developments in Chinese Maritime Law
    Luo, Huijie
    Li, Miao
    JOURNAL OF MARITIME LAW AND COMMERCE, 2010, 41 (03): : 403 - 419
  • [46] Effects of Substrate Temperature on Indium Gallium Nitride Nanocolumn Crystal Growth
    Keating, S.
    Urquhart, M. G.
    McLaughlin, D. V. P.
    Pearce, J. M.
    CRYSTAL GROWTH & DESIGN, 2011, 11 (02) : 565 - 568
  • [47] Recent developments of numerical calculation in crystal growth of SiC
    Kakimoto K.
    Nakano S.
    J.Vac. Soc.Japan, 8 (313-320): : 313 - 320
  • [48] Crystal growth of gallium nitride and manganese nitride using an high pressure thermal gradient process
    Kelly, F
    Gilbert, DR
    Chodelka, R
    Singh, RK
    Pearton, S
    SOLID-STATE ELECTRONICS, 2003, 47 (06) : 1027 - 1030
  • [49] Epitaxial growth of gallium nitride
    Davis, R. F.
    Bishop, S. M.
    Mita, S.
    Collazo, R.
    Reitmeier, Z. J.
    Sitar, Z.
    PERSPECTIVES ON INORGANIC, ORGANIC, AND BIOLOGICAL CRYSTAL GROWTH: FROM FUNDAMENTALS TO APPLICATIONS, 2007, 916 : 520 - +
  • [50] Growth of gallium nitride by HVPE
    Cadoret, R
    Trassoudaine, A
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (32) : 6893 - 6905
12345