Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride

被引：42
|
作者：
Ehrentraut, Dirk [1 ]
Kagamitani, Yuji [1 ]
Fukuda, Tsuguo [1 ]
Orito, Fumio [2 ]
Kawabata, Shinichiro [3 ]
Katano, Kizuku [3 ]
Terada, Shigeru [3 ]
机构：
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] MC Res & Innovat Ctr, Goleta, CA 93117 USA
[3] Mitsubishi Chem Corp, Ibaraki 3001295, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 17期
基金：
日本学术振兴会;
关键词：
ammonothermal crystal growth; gallium nitride;
D O I：
10.1016/j.jcrysgro.2008.06.017
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The acidic ammonothermal route is a latest development in the field of bulk crystal growth of GaN. We summarize our achievements obtained in this field, including an estimation of the theoretical possible maximum stable growth rate and the growth on a 2-in large GaN seed crystal. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：3902 / 3906
页数：5
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