High power 1.5 μm integrated superluminescent light source with tilted ridge waveguide

被引：1
|
作者：
Liu, Y [1 ]
Song, JF
Zeng, YP
Wu, B
Zhang, YT
Qian, Y
Sun, YZ
Du, GT
机构：
[1] Jilin Univ, State Key Lab Integrated Optoelect, Dept Elect Engn, Changchun 130023, Peoples R China
[2] Jilin Univ, Inst Posts & Telecommun, Changchun 130020, Peoples R China
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2001年 / 33卷 / 12期
关键词：
monolithic integration; multiwavelength light source; ridge waveguide; semiconductor optical amplifier; spectrum slicing; superluminescent diode; wavelength division multiplexing;
D O I：
10.1023/A:1013318426338
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to further suppress the F-P lasing and increase the superluminescent power, the tilted ridge waveguide was introduced to the integrated superluminescent device [monolithic integration of the superluminescent diode (SLD) with semiconductor optical amplifier (SOA)]. By this means, high power 1.5 mum integrated superluminescent light source has been fabricated without anti-reflection (AR) coating. The F-P oscillations between the two cleaved facets were suppressed successfully compared with the device without ridge waveguide. More than 200 mW peak pulsed power was obtained under quasi-CW condition (0.1 ms pulse width, 10% duty cycle) by co-operation of the two integrated sections. The spectral FWHM is 25 nm.
引用
收藏
页码：1233 / 1239
页数：7
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