High power 1.5 μm integrated superluminescent light source with tilted ridge waveguide

In order to further suppress the F-P lasing and increase the superluminescent power, the tilted ridge waveguide was introduced to the integrated superluminescent device [monolithic integration of the superluminescent diode (SLD) with semiconductor optical amplifier (SOA)]. By this means, high power 1.5 mum integrated superluminescent light source has been fabricated without anti-reflection (AR) coating. The F-P oscillations between the two cleaved facets were suppressed successfully compared with the device without ridge waveguide. More than 200 mW peak pulsed power was obtained under quasi-CW condition (0.1 ms pulse width, 10% duty cycle) by co-operation of the two integrated sections. The spectral FWHM is 25 nm.