High-power 1.5 μm InGaAsP/InP strained quantum wells integrated superluminescent light source with tilted structure

被引：0
|
作者：
Liu, Yang [1 ]
Song, Junfeng [1 ]
Zeng, Yuping [1 ]
Wu, Bin [1 ]
Zhang, Yuantao [1 ]
Qian, Ying [2 ]
Sun, Yingzhi [2 ]
Du, Guotong [1 ]
机构：
[1] Electronic Engineering Department, State Key Laboratory on Integrated Optoelectronics, Jilin University, JieFang Rd 119, Changchun 130023, China
[2] Institute of Posts and Telecommunication, Jilin University, Changchun 130012, China
来源：
| 2001年 / Japan Society of Applied Physics卷 / 40期
关键词：
D O I：
10.1143/jjap.40.4009
中图分类号：
学科分类号：
摘要：
9
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