Phase change materials and their application to random access memory technology

被引:125
|
作者
Raoux, Simone [1 ]
Shelby, Robert M. [2 ]
Jordan-Sweet, Jean [2 ]
Munoz, Becky [3 ]
Salinga, Martin [4 ]
Chen, Yi-Chou
Shih, Yen-Hao
Lai, Erh-Kun
Lee, Ming-Hsiu
机构
[1] IBM Almaden Res Ctr, Macronix PCRAM Joint Project, San Jose, CA 95120 USA
[2] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[3] Boise State Univ, Dept Mat Sci & Engn, Boise, ID 83725 USA
[4] Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany
关键词
Phase change materials; Phase change random access memory; Non-volatile memory;
D O I
10.1016/j.mee.2008.08.004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Phase change materials can exist in two different phases, the amorphous and the crystalline phase, which exhibit distinctly different physical properties. It is possible to repeatedly switch the state of these materials, from the amorphous phase to the crystalline phase by heating the material above its crystallization temperature, and from the crystalline to the amorphous phase by melt-quenching. Phase change materials have been utilized very successfully in all modern optical re-writable storage media such as CDs, DVDs and Blu-ray disks. Recently, they have also been applied to solid-state memory devices where their large difference in electrical resistivity is used to store information. This paper reviews the unique properties of phase change materials in particular as they are important for their application to these devices. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:2330 / 2333
页数:4
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