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- [11] Blade-Type Phase-Change Random Access Memory Technology, Challenge and ProspectIEICE ELECTRONICS EXPRESS, 2023, 20 (19): : 1 - 6Xie, Weikun论文数: 0 引用数: 0 h-index: 0机构: 58th Res Inst China Elect Technol Grp Wuxi, Wuxi, Peoples R China 58th Res Inst China Elect Technol Grp Wuxi, Wuxi, Peoples R ChinaWang, Lei论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ Posts & Telecommun, Nanjing, Peoples R China 58th Res Inst China Elect Technol Grp Wuxi, Wuxi, Peoples R ChinaChen, Long论文数: 0 引用数: 0 h-index: 0机构: 58th Res Inst China Elect Technol Grp Wuxi, Wuxi, Peoples R China 58th Res Inst China Elect Technol Grp Wuxi, Wuxi, Peoples R ChinaWang, Houjun论文数: 0 引用数: 0 h-index: 0机构: Univ Elect Sci & Technol China, Sch Automat Engn, Chengdu, Peoples R China 58th Res Inst China Elect Technol Grp Wuxi, Wuxi, Peoples R China
- [12] Programming characteristics of phase change random access memory using phase change simulationsJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2701 - 2705Kim, YT论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South Korea Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaHwang, YN论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaLee, KH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaLee, SH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaJeong, CW论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaAhn, SJ论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaYeung, F论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaKoh, GH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaJeong, HS论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaChung, WY论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaKim, TK论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaPark, YK论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaKim, KN论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South KoreaKong, JT论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect, Semicond R&D Ctr, CAE Team, Yongin 449711, South Korea
- [13] Programming characteristics of phase change random access memory using phase change simulations1600, Japan Society of Applied Physics (44):Kim, Young-Tae论文数: 0 引用数: 0 h-index: 0机构: CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofHwang, Young-Nam论文数: 0 引用数: 0 h-index: 0机构: Advanced Technology Development Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofLee, Keun-Ho论文数: 0 引用数: 0 h-index: 0机构: CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofLee, Se-Ho论文数: 0 引用数: 0 h-index: 0机构: CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofJeong, Chang-Wook论文数: 0 引用数: 0 h-index: 0机构: Advanced Technology Development Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofAhn, Su-Jin论文数: 0 引用数: 0 h-index: 0机构: Advanced Technology Development Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofYeung, Fai论文数: 0 引用数: 0 h-index: 0机构: Advanced Technology Development Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofKoh, Gwan-Hyeob论文数: 0 引用数: 0 h-index: 0机构: Advanced Technology Development Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofJeong, Heong-Sik论文数: 0 引用数: 0 h-index: 0机构: Advanced Technology Development Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofChung, Won-Young论文数: 0 引用数: 0 h-index: 0机构: CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofKim, Tai-Kyung论文数: 0 引用数: 0 h-index: 0机构: CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofPark, Young-Kwan论文数: 0 引用数: 0 h-index: 0机构: CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofKim, Ki-Nam论文数: 0 引用数: 0 h-index: 0机构: Advanced Technology Development Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic ofKong, Jeong-Taek论文数: 0 引用数: 0 h-index: 0机构: CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of CAE Team, Semiconductor R and D Center, Samsung Electronics, San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of
- [14] Multiple phase change structure for the scalable phase change random access memory arrayJAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (04)Lee, Jung-Min论文数: 0 引用数: 0 h-index: 0机构: Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea Hanyang Univ, Dept Elect Engn, Seoul 133791, South KoreaSaito, Yuta论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058562, Japan Hanyang Univ, Dept Elect Engn, Seoul 133791, South KoreaSutou, Yuji论文数: 0 引用数: 0 h-index: 0机构: Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808579, Japan Hanyang Univ, Dept Elect Engn, Seoul 133791, South KoreaKoike, Junichi论文数: 0 引用数: 0 h-index: 0机构: Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808579, Japan Hanyang Univ, Dept Elect Engn, Seoul 133791, South KoreaJung, Jin Won论文数: 0 引用数: 0 h-index: 0机构: Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan Hanyang Univ, Dept Elect Engn, Seoul 133791, South KoreaSahashi, Masashi论文数: 0 引用数: 0 h-index: 0机构: Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan Hanyang Univ, Dept Elect Engn, Seoul 133791, South KoreaSong, Yun-Heub论文数: 0 引用数: 0 h-index: 0机构: Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea
- [15] Characteristics of InSbTe Phase-change Random Access MemoryPROCEEDINGS OF THE 13TH WSEAS INTERNATIONAL CONFERENCE ON RECENT ADVANCES IN CIRCUITS, 2009, : 203 - +Kim, Yong Tae论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Semicond Mat & Devices Lab, Seoul 136791, South Korea Korea Inst Sci & Technol, Semicond Mat & Devices Lab, Seoul 136791, South KoreaKim, Eun Tae论文数: 0 引用数: 0 h-index: 0机构: Korea Adv Inst Sci & Technol, Dept Mat & Sci & Engn, Taejon 305701, South Korea Korea Inst Sci & Technol, Semicond Mat & Devices Lab, Seoul 136791, South KoreaLee, Jeong Yong论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Semicond Mat & Devices Lab, Seoul 136791, South Korea
- [16] Improved SPICE Macromodel of Phase Change Random Access Memory2009 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PROGRAM, 2009, : 134 - +Chang, Huan-Lin论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, TaiwanChang, Hung-Chih论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, TaiwanYang, Shang-Chi论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, TaiwanTsai, Hsi-Chun论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, TaiwanLi, Hsuan-Chih论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, TaiwanLiu, C. W.论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
- [17] Thermal characterization and analysis of phase change random access memoryJOURNAL OF APPLIED PHYSICS, 2005, 98 (01)Giraud, V论文数: 0 引用数: 0 h-index: 0机构: Univ Henri Poincare, Ecole Natl Super Mines, Inst Natl Polytech Lorraine, CNRS,UMR 7556,Lab Phys Mat, F-54042 Nancy, FranceCluzel, J论文数: 0 引用数: 0 h-index: 0机构: Univ Henri Poincare, Ecole Natl Super Mines, Inst Natl Polytech Lorraine, CNRS,UMR 7556,Lab Phys Mat, F-54042 Nancy, FranceSousa, V论文数: 0 引用数: 0 h-index: 0机构: Univ Henri Poincare, Ecole Natl Super Mines, Inst Natl Polytech Lorraine, CNRS,UMR 7556,Lab Phys Mat, F-54042 Nancy, FranceJacquot, A论文数: 0 引用数: 0 h-index: 0机构: Univ Henri Poincare, Ecole Natl Super Mines, Inst Natl Polytech Lorraine, CNRS,UMR 7556,Lab Phys Mat, F-54042 Nancy, France Univ Henri Poincare, Ecole Natl Super Mines, Inst Natl Polytech Lorraine, CNRS,UMR 7556,Lab Phys Mat, F-54042 Nancy, FranceDauscher, A论文数: 0 引用数: 0 h-index: 0机构: Univ Henri Poincare, Ecole Natl Super Mines, Inst Natl Polytech Lorraine, CNRS,UMR 7556,Lab Phys Mat, F-54042 Nancy, FranceLenoir, B论文数: 0 引用数: 0 h-index: 0机构: Univ Henri Poincare, Ecole Natl Super Mines, Inst Natl Polytech Lorraine, CNRS,UMR 7556,Lab Phys Mat, F-54042 Nancy, FranceScherrer, H论文数: 0 引用数: 0 h-index: 0机构: Univ Henri Poincare, Ecole Natl Super Mines, Inst Natl Polytech Lorraine, CNRS,UMR 7556,Lab Phys Mat, F-54042 Nancy, FranceRomer, S论文数: 0 引用数: 0 h-index: 0机构: Univ Henri Poincare, Ecole Natl Super Mines, Inst Natl Polytech Lorraine, CNRS,UMR 7556,Lab Phys Mat, F-54042 Nancy, France
- [18] Study of geometric effect on phase change random access memory2005 Non-Volatile Memory Technology Symposium, Proceedings, 2005, : 110 - 114Zhao, R论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, SingaporeChong, TC论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, SingaporeShi, LP论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, SingaporeTan, PK论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, SingaporeLim, KG论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, SingaporeYang, HX论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, SingaporeLee, HK论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, SingaporeHu, X论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, SingaporeLi, JM论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, SingaporeMiao, XS论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, SingaporeWei, XQ论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, SingaporeWang, WJ论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, SingaporeSong, WD论文数: 0 引用数: 0 h-index: 0机构: Data Storage Inst, Singapore 117608, Singapore Data Storage Inst, Singapore 117608, Singapore
- [19] Thin film challenges of phase change random access memoryCHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013), 2013, 52 (01): : 461 - 465Ren, W. C.论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Semicond Mfg Int Corp, Shanghai 201203, Peoples R ChinaJing, X. Z.论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Semicond Mfg Int Corp, Shanghai 201203, Peoples R ChinaXiang, Y. H.论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Semicond Mfg Int Corp, Shanghai 201203, Peoples R ChinaXiao, H. B.论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Semicond Mfg Int Corp, Shanghai 201203, Peoples R ChinaZhang, B. C.论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Semicond Mfg Int Corp, Shanghai 201203, Peoples R ChinaLiu, B.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Semicond Mfg Int Corp, Shanghai 201203, Peoples R ChinaSong, Z. T.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Semicond Mfg Int Corp, Shanghai 201203, Peoples R ChinaRao, F.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Semicond Mfg Int Corp, Shanghai 201203, Peoples R ChinaXu, J.论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Semicond Mfg Int Corp, Shanghai 201203, Peoples R ChinaWu, G. P.论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Semicond Mfg Int Corp, Shanghai 201203, Peoples R ChinaFeng, S. L.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Semicond Mfg Int Corp, Shanghai 201203, Peoples R China
- [20] Thermal stress model for phase change random access memoryADVANCES IN NANOMATERIALS AND PROCESSING, PTS 1 AND 2, 2007, 124-126 : 37 - +Kim, Sung Soon论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea Yonsei Univ, Dept Ceram Engn, Seoul 120749, South KoreaBae, Jun Hyun论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea Yonsei Univ, Dept Ceram Engn, Seoul 120749, South KoreaDo, Woo Hyuck论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea Yonsei Univ, Dept Ceram Engn, Seoul 120749, South KoreaLee, Kyun Ho论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Senicond R&D Ctr, Yongin 449711, Kyunggi, South Korea Yonsei Univ, Dept Ceram Engn, Seoul 120749, South KoreaKim, Young Tae论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Senicond R&D Ctr, Yongin 449711, Kyunggi, South Korea Yonsei Univ, Dept Ceram Engn, Seoul 120749, South KoreaPark, Young Kwan论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Senicond R&D Ctr, Yongin 449711, Kyunggi, South Korea Yonsei Univ, Dept Ceram Engn, Seoul 120749, South KoreaKong, Jeong Taek论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Senicond R&D Ctr, Yongin 449711, Kyunggi, South Korea Yonsei Univ, Dept Ceram Engn, Seoul 120749, South KoreaLee, Hong Lim论文数: 0 引用数: 0 h-index: 0机构: Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea