Spin and valley filter across line defect in silicene

被引：34

作者：

Wang, Sake ^{[1
]}

Ren, Chongdan ^{[2
]}

Li, Yunfang ^{[3
]}

Tian, Hongyu ^{[4
]}

Lu, Weitao ^{[4
]}

Sun, Minglei ^{[5
,6
]}

机构：

[1] Jinling Inst Technol, Dept Fundamental Courses, Nanjing 211169, Jiangsu, Peoples R China

[2] Zunyi Normal Coll, Dept Phys, Zunyi 563002, Peoples R China

[3] Linyi Univ, Sch Mech & Vehicle Engn, Linyi 276005, Peoples R China

[4] Linyi Univ, Sch Phys & Elect Engn, Linyi 276005, Peoples R China

[5] Southeast Univ, Sch Mech Engn, Nanjing 211189, Jiangsu, Peoples R China

[6] ASTAR, Inst High Performance Comp, Singapore 138632, Singapore

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 05期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.7567/APEX.11.053004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a new scheme to achieve an effective spin/valley filter in silicene with extended line defect on the basis of spin-valley coupling due to the intrinsic spin-orbit coupling (SOC). The transmission coefficient of the spin/valley states is seriously affected by the SOC. When a perpendicular magnetic field is applied on one side of the line defect, one valley state will experience backscattering, but the other valley will not; this leads to high valley polarization in all transmission directions. Moreover, the spin/valley polarization can be enhanced to 96% with the aid of a perpendicular electric field. (C) 2018 The Japan Society of Applied Physics

引用

页数：5

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