Spin and valley filter across line defect in silicene

被引:34
|
作者
Wang, Sake [1 ]
Ren, Chongdan [2 ]
Li, Yunfang [3 ]
Tian, Hongyu [4 ]
Lu, Weitao [4 ]
Sun, Minglei [5 ,6 ]
机构
[1] Jinling Inst Technol, Dept Fundamental Courses, Nanjing 211169, Jiangsu, Peoples R China
[2] Zunyi Normal Coll, Dept Phys, Zunyi 563002, Peoples R China
[3] Linyi Univ, Sch Mech & Vehicle Engn, Linyi 276005, Peoples R China
[4] Linyi Univ, Sch Phys & Elect Engn, Linyi 276005, Peoples R China
[5] Southeast Univ, Sch Mech Engn, Nanjing 211189, Jiangsu, Peoples R China
[6] ASTAR, Inst High Performance Comp, Singapore 138632, Singapore
基金
中国国家自然科学基金;
关键词
D O I
10.7567/APEX.11.053004
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a new scheme to achieve an effective spin/valley filter in silicene with extended line defect on the basis of spin-valley coupling due to the intrinsic spin-orbit coupling (SOC). The transmission coefficient of the spin/valley states is seriously affected by the SOC. When a perpendicular magnetic field is applied on one side of the line defect, one valley state will experience backscattering, but the other valley will not; this leads to high valley polarization in all transmission directions. Moreover, the spin/valley polarization can be enhanced to 96% with the aid of a perpendicular electric field. (C) 2018 The Japan Society of Applied Physics
引用
收藏
页数:5
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