The impact of vacancy defects on the performance of a single-electron transistor with a carbon nanotube island

被引：10

作者：

Khademhosseini, Vahideh ^{[1
]}

Dideban, Daryoosh ^{[1
,2
]}

Ahmadi, Mohammad Taghi ^{[3
,4
]}

Ismail, Razali ^{[4
]}

机构：

[1] Univ Kashan, Inst Nanosci & Nanotechnol, Kashan, Iran

[2] Univ Kashan, Dept Elect & Comp Engn, Kashan, Iran

[3] Urmia Univ, Phys Dept, Nanotechnol Res Ctr, Orumiyeh, Iran

[4] Univ Teknol Malaysia, Fac Elect Engn, Johor Baharu, Johor, Malaysia

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2019年 / 18卷 / 02期

关键词：

Carbon nanotube; Quantum dot; Single-electron transistor; Vacancy defects; COULOMB-BLOCKADE; DENSITY;

D O I：

10.1007/s10825-018-01290-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The single-electron transistor (SET) principle of operation is based on the Coulomb blockade (CB) phenomenon. The island material and associated defects have a direct impact on the range of the CB effect and the operating speed of the SET. In this research, the impact of vacancy defects on a SET-based on a carbon nanotube (CNT) is investigated. The results show that a SET with six atomic vacancies exhibits the lowest Coulomb diamond area and highest operating speed. The results also show that increasing the distance between two single vacancies decreases the Coulomb diamond area of the SET. Moreover, the location of the vacancies in the CNT and its effect on the operation of the SET are investigated. The comparison study shows that an antidote vacancy in the CNT close to the drain side results in the shortest CB range and narrowest bandgap, resulting in the CNT SET with the highest operating speed.

引用

页码：428 / 435

页数：8

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