Consideration of the “island” background charge in single-electron transistor simulation

被引：0
|
作者：
I. I. Abramov
E. G. Novik
机构：
[1] Belarussian State University of Information Science,Electronics, and Radio Engineering
来源：
Semiconductors | 2001年 / 35卷
关键词：
Experimental Data; Numerical Model; Magnetic Material; Electromagnetism; Versus Characteristic;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Three approximations of the “island” background charge are described within the proposed 2D numerical model of the metal single-electron transistor. These approximations fit the experimental data well when calculating I–V characteristics of single-electron transistors according to the model developed in many cases. The validity of these approximations is exemplified by specific calculations of I–V characteristics.
引用
收藏
页码：474 / 476
页数：2
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