Light-induced defect creation under intense pulsed illumination in hydrogenated amorphous silicon

被引：0

作者：

Morigaki, K. ^{[1
]}

Hikita, H. ^{[2
]}

Ogihara, D. C. ^{[3
]}

机构：

[1] Hiroshima Inst Technol, Dept Elect & Digital Syst Engn, Saeki Ku, Hiroshima 7315193, Japan

[2] Meikai Univ, Phys Lab, Chiba 2798550, Japan

[3] Yamaguchi Univ, Dept Appl Sci, Ube, Yamaguchi 7558611, Japan

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2009年 / 11卷 / 01期

关键词：

Amorphous hydrogenated silicon; Defect; ESR; Radiation effect; A-SI-H; NUCLEAR DOUBLE-RESONANCE; DANGLING BONDS; OPTICAL-EXCITATION; COLLISION MODEL; ESR-SPECTRA; METASTABILITY; HOLES; PAIRS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Some experimental results taken from the literatures on the kinetics of light-induced defect creation observed under intense pulsed illumination in hydrogenated amorphous silicon (a-Si:H) are reviewed and are discussed in terms of our model. The deconvolution of the ESR line into two components due to normal dangling bonds and hydrogen-related dangling bonds is performed and is compared with their spin density ratio calculated from our model, being consistent with our model. The relationships of the dispersion parameter, P, and the characteristic time, T, vs. the generation rate of free carriers are discussed, being also consistent with our model. Related defects, i.e., hydrogen-related dangling bonds, self-trapped holes and hydrogen-pairs, are discussed.

引用

页码：1 / 14

页数：14

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