SATURATION BEHAVIOR OF THE DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON BY CONTINUOUS AND PULSED-LIGHT ILLUMINATION

被引：2
|
作者：
YOON, JH [1 ]
KIM, HL [1 ]
机构：
[1] KANGWEON NATL UNIV,COLL NAT SCI,DEPT CHEM,CHUNCHON 200701,SOUTH KOREA
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 22期
关键词：
D O I：
10.1063/1.114264
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Measurements of the saturated defect density in hydrogenated amorphous silicon by continuous and pulsed light illumination are reported. It is observed that the saturation value of the defect density by pulsed light illumination is about one order of magnitude higher than by continuous light illumination in device quality films. It has been suggested that this result would be due to the difference in the light-induced defect annealing rate between two cases, in which it is found that the light-induced annealing rate by pulsed light is lower than by continuous light with a similar intensity.© 1995 American Institute of Physics.
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页码：3021 / 3023
页数：3
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