Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes

被引:0
|
作者
Kakushima, K. [1 ]
Ikeuchi, Y. [1 ]
Hoshii, T. [1 ]
Muneta, I. [1 ]
Wakabayashi, H. [1 ]
Tsutsui, K. [2 ]
Iwai, H. [2 ]
Kikuchi, T. [3 ]
Ishikawa, S. [3 ]
机构
[1] Tokyo Inst Technol, Sch Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan
[2] Tokyo Inst Technol, Inst Innovat Res, Tokyo, Japan
[3] Toshiba Co Ltd, Corp Mfg Engn Ctr, Tokyo, Japan
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:85 / 86
页数:2
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