Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes

被引：0

作者：

Kakushima, K. ^{[1
]}

Ikeuchi, Y. ^{[1
]}

Hoshii, T. ^{[1
]}

Muneta, I. ^{[1
]}

Wakabayashi, H. ^{[1
]}

Tsutsui, K. ^{[2
]}

Iwai, H. ^{[2
]}

Kikuchi, T. ^{[3
]}

Ishikawa, S. ^{[3
]}

机构：

[1] Tokyo Inst Technol, Sch Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Inst Innovat Res, Tokyo, Japan

[3] Toshiba Co Ltd, Corp Mfg Engn Ctr, Tokyo, Japan

来源：

2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：85 / 86

页数：2

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