Hot Electron Emission Lithography: a method for efficient large area e-beam projection

被引：7
|
作者：
Poppeller, M
Cartier, E
Tromp, RM
机构：
[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
来源：
MICROELECTRONIC ENGINEERING | 1999年 / 46卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(99)00058-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed an electron lithography method, Hot Electron Emission Lithography (HEEL), which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design of the mask, manufactured by standard MOS technology, will be discussed. Patterns printed into e-beam resist by a 1:1 projection system show the applicability of the mask for lithography purposes. The minimum feature size projected so far is 160 nm in a system capable of 90 nm resolution. Further improvements in resolution to 50 nm are possible.
引用
收藏
页码：183 / 186
页数：4
相关论文
共 50 条
  • [41] TELECENTRIC BEAM POSITIONING FOR ADVANCED E-BEAM LITHOGRAPHY
    STICKEL, W
    LANGNER, GO
    PETRIC, PF
    MICROELECTRONIC ENGINEERING, 1992, 17 (1-4) : 25 - 28
  • [42] Geometrically Induced Dose Correction Method for e-Beam Lithography Applications
    Galler, R.
    Choi, K-H.
    Gutsch, M.
    Hohle, C.
    Krueger, M.
    Ramos, L. E.
    Suelzle, M.
    Weidenmueller, U.
    PHOTOMASK TECHNOLOGY 2010, 2010, 7823
  • [43] APPLICATION OF E-BEAM LITHOGRAPHY AND REACTIVE ION ETCHING TO THE FABRICATION OF MASKS FOR PROJECTION X-RAY-LITHOGRAPHY
    MALEK, CK
    LADAN, FR
    RIVOIRA, R
    MORENO, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3315 - 3318
  • [44] Hot electron emission lithography
    Poppeller, M
    Cartier, E
    Tromp, RM
    EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 : 316 - 323
  • [45] Hot electron emission lithography
    Appl Phys Lett, 19 (2835):
  • [46] Hot electron emission lithography
    Poppeller, M
    Cartier, E
    Tromp, RM
    APPLIED PHYSICS LETTERS, 1998, 73 (19) : 2835 - 2837
  • [47] Hybrid Lithography for Triple Patterning Decomposition and E-Beam Lithography
    Tian, Haitong
    Zhang, Hongbo
    Xiao, Zigang
    Wong, Martin D. F.
    OPTICAL MICROLITHOGRAPHY XXVII, 2014, 9052
  • [48] MEASUREMENTS OF ELECTRON RANGE AND SCATTERING IN HIGH-VOLTAGE E-BEAM LITHOGRAPHY
    MANKIEWICH, PM
    JACKEL, LD
    HOWARD, RE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 174 - 176
  • [49] Acceleration of e-beam lithography by minimized resist exposure for large scale nanofabrication
    Deng, Jie
    Wong, Ten It
    Sun, Ling Ling
    Quan, Chenggen
    Zhou, Xiaodong
    MICROELECTRONIC ENGINEERING, 2016, 166 : 31 - 38
  • [50] Carbon films for use as the electron source in a parallel e-beam lithography system
    Milne, WI
    Teo, KBK
    Chhowalla, M
    Amaratunga, GAJ
    Yuan, J
    Robertson, J
    Legagneux, P
    Pirio, G
    Pribat, D
    Bouzehouane, K
    Bruenger, W
    Trautmann, C
    NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 2001, 11 (04): : 235 - 247
12345