Hot Electron Emission Lithography: a method for efficient large area e-beam projection

被引：7
|
作者：
Poppeller, M
Cartier, E
Tromp, RM
机构：
[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
来源：
MICROELECTRONIC ENGINEERING | 1999年 / 46卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(99)00058-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have developed an electron lithography method, Hot Electron Emission Lithography (HEEL), which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design of the mask, manufactured by standard MOS technology, will be discussed. Patterns printed into e-beam resist by a 1:1 projection system show the applicability of the mask for lithography purposes. The minimum feature size projected so far is 160 nm in a system capable of 90 nm resolution. Further improvements in resolution to 50 nm are possible.
引用
收藏
页码：183 / 186
页数：4
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